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Photoresponse of Metal-Porous Silicon-Silicon Structure

卷 10, 册 7, 2007, pp. 677-686
DOI: 10.1615/JPorMedia.v10.i7.30
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摘要

In this article, we first review the potential applications of porous silicon (PS) in solar cell structures. Then we describe the fabrication of this material by electrochemical anodization method in hydrofluoric acid (HF) solution. The spectral responses of photovoltaic devices based on metal-PS-Si sandwich structures are presented. At room temperature, the photoresponse (photovoltage or photocurrent) of these devices has been measured by variation of the optical excitation energy. The highest photo-sensitivity (photocurrent) was found to be at a wavelength of 540 nm. The photoresponse of PS shows better results as compared to a Si solar cell. The contribution of the photovoltaic effects from the junctions of the metal-PS and from PS-Si heterojunction was observed for the visible wavelength range of light and under white light of different powers. Current-voltage (I-V) characteristics have been done in dark and room light. The results indicate that the sandwich structure has a diode barrier.

对本文的引用
  1. Zare Maryam, Shokrollahi Abbas, Seraji Faramarz E., Effect of fabrication parameters on morphological and optical properties of highly doped p-porous silicon, Applied Surface Science, 257, 22, 2011. Crossref

  2. Shokrollahi Abbas, Zare Maryam, Fabricating optical waveguide based on porous silicon structures, Optik, 124, 9, 2013. Crossref

  3. Juzeliunas Eimutis, Cox Antony, Fray Derek J., Silicon surface texturing by electro-deoxidation of a thin silica layer in molten salt, Electrochemistry Communications, 12, 10, 2010. Crossref

  4. Smith R. Scott, Zubkov Tykhon, Dohnálek Zdenek, Kay Bruce D., The Effect of the Incident Collision Energy on the Porosity of Vapor-Deposited Amorphous Solid Water Films, The Journal of Physical Chemistry B, 113, 13, 2009. Crossref

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