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Telecommunications and Radio Engineering

Erscheint 12 Ausgaben pro Jahr

ISSN Druckformat: 0040-2508

ISSN Online: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

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SIMULATION OF GUNN DIODES WITH A STEP GRADED HOT ELECTRON INJECTOR BASED ON InGaAsP/InGaAlAs- HETEROSTRUCTURE

Volumen 74, Ausgabe 13, 2015, pp. 1193-1202
DOI: 10.1615/TelecomRadEng.v74.i13.60
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ABSTRAKT

Mathematical simulation of advanced Gunn diodes has been carried out with the aid of a computer Silvaco TCAD package for the purpose of developing and upgrading the devices used in radio electronics as microwave oscillators. A possibility of fabricating InP-based Gunn diodes provided with a hot electron injector made of semiconductor compounds, in particular InAlGaAs, being lattice-constant compatible with InP is investigated. A current-voltage curve with a section of negative differential resistance is obtained, as well as, transition characteristics showing the cathode current as a function of time at a given anode voltage. The conditions under which the Gunn diode generates stable high-frequency oscillations are determined.

REFERENZIERT VON
  1. Storozhenko Ihor, Advanced Gunn Diode on Based Graded GaPAs - GaInAs as High Power Source of Millimeter Wave, 2021 IEEE Microwave Theory and Techniques in Wireless Communications (MTTW), 2021. Crossref

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