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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

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ISSN Druckformat: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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TEOS/O2 GAS PRESSURE AS A CHEMICAL COMPOSITION ADJUSTER OF PLASMA DEPOSITED SIO2 THIN FILMS

Volumen 9, Ausgabe 2, 2005, pp. 279-285
DOI: 10.1615/HighTempMatProc.v9.i2.100
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ABSTRAKT

The effect of the total gas pressure on the electrical properties of TEOS/O2 RF discharges and on the SiOxCyHz deposition rate and chemical composition was investigated. The experiments were carried out under well controlled electrical conditions and under constant TEOS partial pressure in order to isolate as much as possible the effect of the total pressure on the deposition process. The increase of pressure by a factor of two under constant discharge power was found to significantly enhance the film growth by a factor of six. At the same time the content of −OH was increased and the Si-C content was decreased indicating the very important role of the total gas pressure on the complete removal of the hydroxyl groups and the film stability.

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