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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

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ISSN Druckformat: 1093-3611

ISSN Online: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT

Volumen 7, Ausgabe 3, 2003, pp. 307-312
DOI: 10.1615/HighTempMatProc.v7.i3.30
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ABSTRAKT

Plasma deposition process of metallurgical grade silicon powders was used in order to combine purification and deposition processes onto different kinds of substrate with a high deposition rate (≈ 100 μm.mn−1). The particles are heated, melted, partially vaporised and finally deposited on a substrate. Under optimised experimental conditions dense deposits are obtained on ceramic substrate with a thickness close to 1 mm. Except the final crystallised zone, EDX and ICP analysis show that the deposits have good purity. However, because of a fast crystallisation, several crystalline defects have been observed. Introduction of hydrogen was used in order to passive this defects and to increase the photovoltaic properties.

REFERENZIERT VON
  1. Ito Tadashi, Kamiya Nobuo, Kimoto Yasuji, Aoki Yuko, Takahashi Naoko, Yamaguchi Satoshi, Motohiro Tomoyoshi, Purification of Silicon Thin Films Containing Nitrogen and Oxygen Impurities using Aluminum-Induced Crystallization, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006. Crossref

  2. De Sousa M., Vardelle A., Mariaux G., Vardelle M., Michon U., Beudin V., Use of a thermal plasma process to recycle silicon kerf loss to solar-grade silicon feedstock, Separation and Purification Technology, 161, 2016. Crossref

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