ABSTRAKT

We have found that the use of "hot" conditions of implantation leads to the formation of the extended layer of SiO₂ with a zinc-containing nanoclusters of size up to 5 nm. The created shape of clusters (rounded, faceted) makes it to suppose their crystalline structure. Following annealing at 700°C leads to redistribution of Zn atoms in implanted region and formation of the larger crystallites with sizes of 10−12 nm (for fluence of 5 × 10¹⁶ cm⁻²) and 12−18 nm (for fluence of 10¹⁷ cm⁻²). Significant diffusion of zinc atoms at "hot" conditions of implantation and subsequent annealing to the surface and deep into silicon dioxide samples was not found, in contrast to the samples of single-crystalline silicon.