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ISSN Druckformat: 1093-3611
ISSN Online: 1940-4360
Indexed in
SPATIAL DISTRIBUTION OF OPTICAL EMISSION IN SiH4/H2 RF DISCHARGES
ABSTRAKT
Spatially resolved optical emission spectroscopy is used to study the variation of atomic hydrogen emission (Hβ) and SiH* (A2Δ) in the interelectrode space of a parallel plate configuration, usually employed for the deposition of amorphous or microcrystalline silicon. Space integrated emission measurements are presented as a function of power consumed in the process, for pure silane discharges and for hydrogen diluted silane discharges. Atomic hydrogen intensity profiles are also compared with the respective profiles recorded in pure hydrogen plasmas. The origin of atomic hydrogen emission and the effect of silane related gas phase chemistry on the discharge characteristics is discussed
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Amanatides E., Mataras D., Frequency variation under constant power conditions in hydrogen radio frequency discharges, Journal of Applied Physics, 89, 3, 2001. Crossref
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Amanatides E., Mataras D., Rapakoulias D. E., Effect of frequency in the deposition of microcrystalline silicon from silane discharges, Journal of Applied Physics, 90, 11, 2001. Crossref