DOI: 10.1615/ICHMT.2004.CHT-04
ISBN Print: 978-1-56700-174-7
ISSN: 2578-5486
NUMERICAL - EXPERIMENTAL INVESTIGATION OF CRYSTAL GROWTH RATE DEPENDENCE ON FACET UNDERCOOLING FOR DIELECTRIC CRYSTAL GROWTH FROM THE MELT
ABSTRACT
Combined experimental and numerical tools are developed and used to define more exactly the growth kinetic relations for (211) crystallographic orientation of Bi4Ge3O12 (BGO) crystal growth, namely, the dependence of crystal growth rate V on supercooling, ΔT of the melt/crystal interface. New apparatus for measurements of the in situ time dependence of the supercooling, ΔT(t), was used and a new two-dimensional numerical model was applied to analyze the effect of temperature boundary conditions and faceting phenomena on the character of the observed V(ΔT) dependence. Results show that, for the variant of the crystal growth technique which was used (melt cooling during Axial Heating Process method - AHP method), the type of the V(ΔT) dependence does not depend on boundary conditions. The new investigations illustrate the superlinear behavior for V(ΔT) dependence for (211) BGO crystallographic orientation and show that previous data on sublinear behavior of V(ΔT) dependence for this crystallographic orientation of BGO have not been justified.