Publicado 12 números por año
ISSN Imprimir: 0040-2508
ISSN En Línea: 1943-6009
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PHYSICAL PROPERTIES OF ZnSe HETEROLAYERS OBTAINED BY IZOVALENT SUBSTITUTION
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SINOPSIS
Optical properties of ZnSe heterolayers obtained by the method of isovalent substitution on the ZnS substrates have been investigated. The forbidden zone width of the layers corresponds to Eg of ZnSe in the cubic modification. The luminescence spectrum contains a single effective (~20% at 300K) edge band being determined by the band-to-band recombination and exciton annihilation.
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Georgibiani, A.N. and Kotlyarevsky, B.M. , (1985), Problems of developing injection light diodes based on wide-band А2В6 compounds.
-
Nedeoglo, D.D. and Simashkevich, A.V. , (1984), Electrical and luminescence properties of ZnSe.
-
Krasnov, A.N., Vaksman, Yu.F., and Purtov, Yu.N. , (1992), Hole conduction in ZnSe monocrystals with metalloid excess.
-
Serdyuk, V.V., Vaksman, Yu.F., Zubritsky S.V., Purtov Yu.N., and Xuan F. Rodriges , (1988), Radiative recombination of ZnSe monocrystals activated by IV group elements.
-
Grivul, V.I., Makhniy, V.P., and Slyotov, M.M. , (2007), Nature of the edge luminescence of diffusion ZnSe:Sn layers.
-
Makhniy, V.P., Baranyuk, V.Ye., Demich, M.V., Melnik, V.V., (2000), Isovalent substitution -perspective methods of producing heterojunction optoelectronical devices.
-
Ryzhikov, V.D. , (1986), Scintillation crystals of semiconductor AIIBVI compounds. Formation, properties, application.
-
Makhniy, V.P. , (2001), Principles and methods of modulation spectroscopy.
-
Gribkovsky, V.P. , (1975), Theory emission and absorption of light in semiconductors.
-
Koh, E. and Langer, D.W. , (1970), Luminescence of ZnSe near the band edge under strong laser light excitation.