Publicado 4 números por año
ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360
Indexed in
ION-BEAM SYNTHESIS OF ZINC-BASED NANOPARTICLES IN Si AND SiO2
SINOPSIS
We have found that the use of "hot" conditions of implantation leads to the formation of the extended layer of SiO2 with a zinc-containing nanoclusters of size up to 5 nm. The created shape of clusters (rounded, faceted) makes it to suppose their crystalline structure. Following annealing at 700°C leads to redistribution of Zn atoms in implanted region and formation of the larger crystallites with sizes of 10−12 nm (for fluence of 5 × 1016 cm−2) and 12−18 nm (for fluence of 1017 cm−2). Significant diffusion of zinc atoms at "hot" conditions of implantation and subsequent annealing to the surface and deep into silicon dioxide samples was not found, in contrast to the samples of single-crystalline silicon.
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Zukowski Pawel, Koltunowicz Tomasz N., Bondariev Vitalii, Fedotov Alexander K., Fedotova Julia A., Determining the percolation threshold for (FeCoZr)x(CaF2)(100−x) nanocomposites produced by pure argon ion-beam sputtering, Journal of Alloys and Compounds, 683, 2016. Crossref