RÉSUMÉ

Q-factors of eigen oscillations of axial-laminated structure consisting of a dielectric layer positioned in parallel to the end-face surface of a partially shielded half-disk dielectric resonator are investigated. It is established that while inserting of the investigated dielectric sample into the resonator field in parallel to its lateral surface at a certain sighting distance would result in variation of the resonator eigen frequencies and its Q-factor the more the larger are the values of the real and the imaginary parts of the permittivity values of the investigated material. The influence of dielectric type, its thickness and sighting distance upon the frequency and the resonant Q-factor for the different oscillation modes are investigated. The dependences of frequency and steepness variations of electron adjustment of Gunn diode active oscillator stabilized by axial-laminated structure change upon dielectric type and thickness are obtained.