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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publication de 4  numéros par an

ISSN Imprimer: 1093-3611

ISSN En ligne: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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PROCESSES OF DEPOSITION OF AMORPHOUS METAL/CARBON FILMS OF VARIOUS ELEMENTAL COMPOSITIONS

Volume 20, Numéro 1, 2016, pp. 1-11
DOI: 10.1615/HighTempMatProc.2016017148
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RÉSUMÉ

The regularities of changing the elemental composition of metal/carbon Cu/a−C:H and Ni/a−C:H composite thin films formed by combining the technology of physical sputtering a metal target with plasma-enhanced chemical vapor deposition from two types of reactive gases Ar−CH2 and Ar−CH4 are considered. The material of the metal target used was of two types: nickel and copper. Two such metals possess different abilities to dissolve in the lattice of carbon. The Rutherford backscattering method allows showing the behavior of the increasing carbon concentration with the growth of the content of a reactive gas (C2H2, CH4) in Me/a−C:H thin films.

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