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Composites: Mechanics, Computations, Applications: An International Journal

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COHERENT TO SEMI-COHERENT TRANSITION IN SEMICONDUCTOR HETEROEPITAXIAL SUPERLATTICES

Volume 13, Issue 3, 2022, pp. 101-112
DOI: 10.1615/CompMechComputApplIntJ.2022043213
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ABSTRACT

The degradation in the performance of devices based on semiconductor epitaxial systems depends on the state of residual stress. In the case of growth of a homogeneous epitaxial film on a substrate, the build-up of coherency stresses drives the formation of interfacial misfit dislocations. In systems with a 'reasonably high' magnitude of misfit, this occurs beyond a critical thickness (hc) of the film; wherein the strain energy of the system is minimized by formation of misfit dislocations at the film-substrate interface. The current work pertains to the coherent to semi-coherent transition of epitaxial superlattices. Using AlN/Al03Ga07N superlattices on GaN substrate as a model system, finite element simulations are used to study the effect of the periodicity of the superlattice (hSL) and configurations of periodic layers on the critical thickness (hc). Due to the presence of multiple interfaces in a superlattice structure, the most favorable interface for the formation of interfacial misfit dislocation is also determined. Finite element simulations were carried out, taking into account the parameters such as number of periods (n), the total thickness of the overlayer (n.hSL), and the order of AlN & AlGaN layers over the GaN substrate. The salient observations are as follows: (i) the hc (n.hSL) of the superlattice is independent of the periodicity factor 'n' and configurations of periodic layers in a superlattice, (ii) Al03Ga07N layer has a buffer effect on the stress state of superlattice and critical thickness, and (iii) the interface between the substrate and first layer of a superlattice is the most probable position for the formation of misfit edge dislocation.

Figures

  • Schematic of a AlN,AlGaN/GaN superlattice. (A) Two periods of the superlattice on GaN
substrate is shown. The regions where eigenstrains are imposed to simulate the flm layers and
the interfacial misft edge dislocation are shown in the fgure. (B) Schematic of a AlN,AlGaN/
GaN superlattice with an interfacial misft dislocation extending to the second interface. Interfaces are labelled as 1, 2, 3, and 4 starting from the flm-substrate interface. (C) Schematic of a
AlN,AlGaN/GaN superlattice confguration with an interfacial misft dislocation segment lying
between second and third interfaces.
  • Plot of state of stress (σxx) for a coherent state in: (A) 2.hSL (1,1) superlattice; (B) 2.hSL
(8,8) superlattice
  • Plot of state of stress (σxx) in the presence of a interfacial misft dislocation in: (A) 2.hSL
(8,8) superlattice; (B) 5.hSL(16,16) superlattice
  • The variation in strain energy of superlattices with number of layers (keeping hA = hB)
for n.h
SL(1,1), n.hSL(2,2) and n.hSL(4,4) systems. The plot shows the energy of systems with both
coherent and semi-coherent interfaces.
  • Plot showing the critical thickness (hc) variation as a function of number of layers in a
superlattice period. The critical thicknesses of Al0.30Ga0.70N/GaN (blue dashed line) and AlN/GaN
(red dashed line) are plotted for reference.
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