年間 12 号発行
ISSN 印刷: 0040-2508
ISSN オンライン: 1943-6009
Indexed in
UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN
要約
The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W.
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Anisimova, I.D., Vikulin, I.M., Zaitov, F.A., and Kurmashev, Sh.D., Semiconductor photoreceivers: ultraviolet, visible and near-field infrared spectrum ranges.
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Blank, T.V. and Goldberg, Yu.A., Semiconductor photo-sensitive converters for ultraviolet spectral range.
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Makhniy, V.P. and Melnik, V.V., Photovoltaic properties of Ni–ZnSe contacts.
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Rozenfeld, A.B., Ryzhikov, V.D., Onyshenko, G.M., Galkin, S.M. at al., Small-size UV radiometer on the basis of Schottky diodes.
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Ryzhikov, V.D., Scintillation crystals of semiconductor junctions А<sup>II</sup> В<sup>VI</sup>. Technology, properties, application.
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Makhniy, V.P., Physical processes in diode structures based on wide-band-gap semiconductors А<sup>2</sup>В<sup>6</sup>.
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Batavin, V.V., Kontsevoy, Yu.A., and Fedorovich, Yu.V., Measuring of parameters of semiconductor materials and structures.
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Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts.
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Lampert, M.A. and Mark, P., Current Injection in Solids.