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Telecommunications and Radio Engineering

Publicou 12 edições por ano

ISSN Imprimir: 0040-2508

ISSN On-line: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

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DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP

Volume 78, Edição 8, 2019, pp. 715-723
DOI: 10.1615/TelecomRadEng.v78.i8.70
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RESUMO

The paper discusses the mechanisms of defect formation in melt zinc selenide crystals doped with isovalent impurities of the second group of the Periodic Table. An analytical calculation of the concentrations of equilibrium point defects was carried out by the method of quasichemical reactions using the concepts of electronegativity and effective charge. It has been established that the dominant defects in the doped material are singly charged vacancies of zinc V'Zn and selenium V·Se, as well as singly charged interstitial selenium Se'i. It is shown that the increase in doping temperature Ta from 373 to 1237 K causes se increase of acceptor centers number (V'Zn and Se'i) and decrease of concentration of donor ounces V·Se however, the conductivity of doped substrates at 300 K remains a hole in the whole range of change Ta. At Ta = 373 K the estimated concentration of free holes is ~1019 cm-3 and satisfactorily consistent with the value p determined from the temperature dependence of the layer resistance ZnSe:Ca.

Referências
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