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Telecommunications and Radio Engineering

Publicou 12 edições por ano

ISSN Imprimir: 0040-2508

ISSN On-line: 1943-6009

SJR: 0.185 SNIP: 0.268 CiteScore™:: 1.5 H-Index: 22

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Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport

Volume 67, Edição 10, 2008, pp. 881-894
DOI: 10.1615/TelecomRadEng.v67.i10.40
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RESUMO

Features of initiation and drift of the space charge waves in the Gunn-effect diode based on variband GaPx(z)As1−x(z) with a n+n cathode has been studied. It is shown that there are phenomena in the variband Gunn diodes, which do not exist in the diodes based on spatially homogeneous semiconductors. A3B5 variband threefold semiconductors are generalized.

CITADO POR
  1. Storozhenko I. P., Arkusha Yu. V., The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime, 2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals, 2010. Crossref

  2. On increasing power of short InGaPAs graded-gap Gunn diodes, Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”, 31, 2019. Crossref

  3. Storozhenko Ihor, Kaydash Marina, Yaroshenko Oleksandr, Arkusha Yuri, Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref

  4. Storozhenko Ihor, Kaydash Marina, Theoretical Study of Current Oscillations in Gunn Diodes Based on Graded III-nitrides Operating in Submillimeter Range: Frequency and Power, 2020 IEEE Ukrainian Microwave Week (UkrMW), 2020. Crossref

  5. Storozhenko Ihor, Kaydash Maryna, Yaroshenko Oleksandr, The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors, 2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET), 2018. Crossref

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