Inscrição na biblioteca: Guest
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publicou 4 edições por ano

ISSN Imprimir: 1093-3611

ISSN On-line: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

Indexed in

FORMATION OF PLATINUM SILICIDE DURING RAPID THERMAL PROCESSING OF THE PLATINUM− SILICON SYSTEM: MICROSTRUCTURE AND ELECTROPHYSICAL CHARACTERISTICS

Volume 23, Edição 3, 2019, pp. 255-273
DOI: 10.1615/HighTempMatProc.2019031214
Get accessGet access

RESUMO

This work presents the results of investigating the microstructure: film thickness, grain size, microre-lief on the boundary between silicide and silicon and on the silicide surface in the platinum film-bulk silicon system after rapid thermal processing (RTP) by halogen lamps in a nitrogen medium within the temperature range from 200 to 550°C with a step of 50°C and the treatment duration of 7 s. The influence of the selected temperature on the size of grains, specific features of conjugations of the closest of them, layout of the interface and the silicide surface, and on the imperfection of grains was determined. Resistivity was measured in the film-substrate system as a temperature function of rapid thermal processing. The heights of the Schottky barrier were determined in the silicide-silicon system as well as the current-voltage (I-V) parameters of the formed Schottky diodes were measured. Comparison was made between the obtained characteristics of microstructure and electrophysical properties of the examined systems and the systems formed under the conditions of the conventional furnace single-stage (550°C, 30 min) and double-stage (350°C, 180 min + 550°C, 30 min) thermal treatment.

Referências
  1. Andrews, J.M. and Korch, F.B., Formation of NiSi and Current Transport Across the NiSi-Ni Interface, Solid State Electron, no. 14, pp. 901-907, 1971.

  2. Bondariev, V.A., Gorushko, V., Pilipenko, V.A., and Solodukha, V., Characteristic Features of Heating Semiconductor Silicon Structures during Rapid Thermal Treatment in the VLSI Technology, High Temp. Mater. Process.: An Int. Quart. High-Technol. Plasma Process., vol. 22, no. 1, pp. 1-6, 2018.

  3. Borisenko, V.E. and Hesketh, P.J., Rapid Thermal Processing of Semiconductors, New York: Plenum Press, pp. 358-374, 1997.

  4. Ievlev, V.M., Soldatenko, S.A., Kushchev, S.B., Gorozhankin, Yu.V., and Vachtel, V.I., Effect of Photon Activation in Synthesis of Silicide Films of (111) Si-Ni-Pt Heterosystem, Condensed Media and Interphase Boundaries, vol. 9, no 3, pp. 216-227, 2007 (in Russian).

  5. Ilyuschenko, A.Ph., Shevtsov, A.I., Astashynski, V.M., Kuzmitski, A.M., Chumakov, A.N., Bosak, N.A., Gromyko, G.F., Letsko, A.I., Buikus, K.V., and Ilyuschenko, T.A., Development of Scientific and Technological Principles of Applying Composition Coatings Formed by High-Energy Pulses and SHS, High Temp. Mater. Process.: An Int. Quart. High-Technol. Plasma Process., vol. 20, no. 3, pp. 225-240, 2016.

  6. Larrien, G., Dubois, E., Wallart, X., and Baie, X., Formation of Platinum-Based Silicide Contacts: Kinetics, Stoichiometry and Current Drive Capabilities, J. Appl. Phys., vol. 94, no. 12, pp. 7801-7810, 2003.

  7. Lee, J.-G., Nagase, T., Yasuda, H., and Mori, H., Synthesis of Metal Silicide at Metal/Silicon Oxide Interface by Electronic Excitation, J. Appl. Phys., vol. 117, no. 12, pp. 194307, 2015.

  8. Lepselter, M.P., Fiory, A.T., and Ravindra, N.M., Platinum and Rhodium Silicide-Germanide Optoelectronics, J. Electron. Mater., vol. 37, no. 4, pp. 403-416, 2007.

  9. Li, M.C., Zhao, L.C., Zhen, X.H., and Chen, X.K., Effects of Annealing Processing on Morphological, Compositional and Schottky Characterization of PtSi/Si Diodes, Mater. Lett., vol. 57, pp. 3735-3740, 2003.

  10. Murarka, S.P., Silicides for VLSI Applications, New York: Academic Press, 1983.

  11. Naem, A.A., Platinum Silicide Formation using Rapid Thermal Processing, J. Appl. Phys., vol. 64, no. 8, pp. 4161-4167, 1988.

  12. Papatzika, S., Hasta, N.A., Angelis, C.T., Dimitriadis, C.A., Kamarinos, G., and Lee, J.I., Investigation of Noise Sources in Platinum Silicide Schottky Barrier Diodes, Appl. Phys. Lett., vol. 80, no. 8, pp. 1468-1470, 2002.

  13. Poate, J.M., Tu, K.N., and Mayer, J.W., Eds., Thin Films-Interdiffusion and Reactions, New York: Wiley, 1978.

  14. Popov, S., Power Schottky Diodes, Electronics Components, no. 8, pp. 77-81, 2002 (in Russian).

  15. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts, Oxford, UK: Clarendon, 1988.

  16. Sisodia, V., Balse, W., Avasthi, D.K., Kabiraj, D., and Jain I.P., Silicide Formation Study at the Interface of Zr/Si System using High-Energy Swift Heavy Ions, Radiat. Meas., vol. 40, pp. 762-764, 2005.

  17. Solodukha, V.A., Pilipenko, V.A., Gorushko, V.A., Komarov, F.F., and Milchanin, O.V., Formation of Platinum Silicide Layers During Rapid Thermal Processing of the Platinum-Silicon System: Structural-Phase Changes, High Temp. Mater. Process.: An Int. Quart. High-Technol. Plasma Process., vol. 23, no. 3, pp. 195-208, 2019.

  18. Solodukha, V.A., Turtsevich, A.S., Solov'ev, Ya.A., Komarov, F.F., Milchanin, O.V., Kovaleva, T.B., and Gaponenko S.V., Formation of the Nickel-Platinum Alloy Silicide Schottky Barriers, Russian Micro-electronics, vol. 46, no. 1, pp. 1-8, 2014.

  19. Sze, S.M., Physics for Semiconductor Devices, Part 2, New York: McGraw-Hill Book Company, 1983.

  20. Uglov, V.V., Kuleshov, A.K., Malashevich, A.A., Ivanov, Y.F., and Koval, N.N., Influence of Annealing Temperature on the Structure and Phase Composition of T15K6 Hard Alloy with Titanium Coating after Treatment by Intense Pulsed Electron Beams, High Temp. Mater. Process.: An Int. Quart. High-Technol. Plasma Process., vol. 20, no. 2, pp. 127-138, 2016.

688 Visualizações do artigo 15 downloads de artigos Métricas
688 VISUALIZAÇÕES 15 TRANSFERÊNCIAS Google
Scholar
CITAÇÕES

Artigos com conteúdo semelhante:

INFLUENCE OF ANNEALING ON THE PHYSICAL AND MECHANICAL PROPERTIES OF (TiSi)N/CrN MULTILAYER COATINGS PRODUCED BY CATHODIC ARC PHYSICAL VAPOR DEPOSITION High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.27, 2023, issue 4
V. V. Grudnitsky, Olga V. Maksakova, Vyacheslav M. Beresnev, S. A. Klymenko, O. V. Glukhov, D. V. Horokh, I. V. Doshchechkina, S. V. Lytovchenko
INFLUENCE OF DEPOSITION PARAMETERS ON THE STRUCTURE AND THERMAL STABILITY OF Ti−Al−N COATINGS PRODUCED BY REACTIVE MAGNETRON SPUTTERING High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.19, 2015, issue 2
O. R. Lyudchik, F. F. Komarov, O. V. Korolik, V. A. Zaikov, Iryna M. Klimovich
ELECTRON-ION-PLASMA MODIFICATION OF CARBON STEEL High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.25, 2021, issue 1
E. A. Petrikova, Yuriy H. Akhmadeev, Maria E. Rygina, I. V. Lopatin, Yurii F. Ivanov, Olga V. Krysina
THE EFFECT OF SIZE STABILIZATION OF CARBON STEELS AUSTENITE High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.18, 2014, issue 4
Yurii F. Ivanov, E. V. Kozlov
EXPLOSIVE VAPORIZATION OF WATER AND PROPANOL ON FLAT AND NANOSTRUCTURED MICROHEATERS International Heat Transfer Conference 16, Vol.19, 2018, issue
Igor A. Kozulin, Vladimir V. Kuznetsov
Portal Digital Begell Biblioteca digital da Begell eBooks Diários Referências e Anais Coleções de pesquisa Políticas de preços e assinaturas Begell House Contato Language English 中文 Русский Português German French Spain