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ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360
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0.4
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0.1
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0.00005
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0.07
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0.198
SNIP:
0.48
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20
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FORMATION OF WEAR-RESISTANT ANODIC OXIDE FILMS ON SILICON ALUMINUM ALLOY FOR ELECTRICAL AND ELECTRONIC MATERIALS
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RÉSUMÉ
The composition of electrolytes for the formation of wear-resistant oxide layers on the silicon aluminum alloy by the method of high-voltage electrochemical oxidation is developed. Obtained anodic oxide films possess a thickness of up to 100 μm and a hardness of up to 5.5 GPa. The frictional behavior of oxide films in different counter-body−substrate friction pairs under conditions of dry friction was investigated. It was established that the use of the "oxide coating−oxide coating" pair in the dry friction regime shows the highest wear resistance in comparison with friction pairs of bare alloys.
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Kiseleva, S., Zajnullina, L., Abramova, M., Dudareva, N.J., and Aleksandrov, I., Mikrodugovoe Oksidirovanie Vysokokremnistogo Aljuminievogo Splava AK12D, Nauka I Obrazovanie. MGTU im. N. Je. Baumana. Jelektron. Zhurn, no. 7, pp. 115-128,2015.
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Kryshtal, M., Ivashin, P., Rastegaev, I., Polunin, A., and Borgardt, E., Influence of Nanosized Silica Additive in the Electrolyte on Characteristics of Oxide Layers Formed by Micro-Arc Oxidation of Al-Si Alloy AK9PCh, Vect. Sci. TSU, no. 1, pp. 48-52, 2014.
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Kryshtal, M., Ivashin, P., Rastegaev, I., Polunin, A., Borgardt, E., and Tverdohlebo, A.Y., Increasing the Efficiency of Micro-Arc Oxidation Technology of Aluminum-Silicon Alloys, Vect Sci. TSU, vol. 2, no. 2 (32-2), pp. 86-92,2015.
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Nmadu, D., Eli-Chukwu, N., Uma, U., Ogah, O., Parshuto, A., Eheduru, M., Ezichi, S., andMba-Ogbonna, C., Using High Voltage Electrochemical Oxidation (HVEO) to Obtain Protective Coatings, Surface Finishing on Electronic Materials., Dig. J. Nanomater. Biostruct., vol. 17, no. 2, pp. 569-577,2022.
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Nmadu, D. and Parshuto, A., Influence of the Anodizing Temperature on the Mechanical Properties of Highly Porous Anodic Alumina Obtained Using High-Voltage Electrochemical Oxidation, High Temp. Mater. Process., vol. 21, no. 1, pp. 81-90, 2017.
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